VSF614C1 visible light emitting diode ?@ anode ?a cathode features high luminous intensity wide illumination compact applications displays indicators decorations 1. absolute maximum ratings (ta=25??) symbol unit if ma ifp a vr v pd mw topr ?? tstg ?? tj ?? tls ?? *2:time 5 sec max,position:up to 3mm from the body 100 260 lead soldering temp.*2 *1:tw=10us,t=10ms ratings dimensions (unit:mm) 50 0.5 5 120 -20 to 80 -30 to 100 power dissipation operating temp. storage temp. junction temp. i t e m forward current (dc) forward current (pulse)*1 reverse voltage spectral output 0 20 40 60 80 100 120 560 610 660 wavelength(nm) relative power output(%) to purchase this part contact marktech optoelectronics at 800.984.5337 optoelectronics www.marktechopto.com marktech
VSF614C1 visible light emitting diode 2.electrical & optical characteristics (ta=25 ?? ) symbol min typ max unit po 0.9 1.7 mw iv 300 mcd vf 2.0 2.4 v ir 100 ? a ? p 610 nm ?? 17 nm ?? 30 deg. tr ?| ns tf ?| ns cj 20 pf i/t -0.8 %/ ?? v/t -1.7 mv/ ?? conditions if=20ma if=20ma if=20ma ifp=20ma ifp=20ma if=10ma vr=5v if=20ma if=20ma if=20ma 1mhz ,v=0v i t e m power output luminous intensity forward voltage temp. coefficient of vf if=10ma temp. coefficient of iv reverse current peak wavelength spectral line half width half intensity beam angle rise time fall time junction capacitance thermal derating curve 0 10 20 30 40 50 60 -30 0 30 60 90 ambient temperature(??) forward current(ma) forward i-v characteristics 0 10 20 30 40 50 60 0 1 2 3 forward voltage(v) forward current(ma) luminous intensity vs temperature if=10ma 0 20 40 60 80 100 120 140 -30 0 30 60 90 ambient temperature(??) luminous intensity(%) 660 radiation pattern 0 20 40 60 80 100 120 -90 -60 -30 0 30 60 90 beam angle(deg.) relative power output(%) relative power vs forward current 0 100 200 300 0 10 20 30 40 50 60 forward current(ma) relative power output(%) forward voltage vs temperature if=10ma 0 0.5 1 1.5 2 2.5 3 -30 0 30 60 90 ambient temperature(??) forward voltage(v)
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